ALD110808PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

ALD110808PCL

Pakua Hati ya Hati RoHSUfuataji wa RoHS
ALD110808PCL
Mtengenezaji
Advanced Linear Devices, Inc.
Sehemu ya Watengenezaji
ALD110808PCL
Jamii
Za kipekee Semiconductor Bidhaa
Jamii Ndogo
Transistors - FETs, MOSFETS - Arrays
Mfululizo
EPAD®
sehemu ya HaliActive
FET Aina4 N-Channel, Matched Pair
FET KipengeleStandard
Unyevu kwa Chanzo Voltage (Vdss)10.6V
Sasa - Kuendelea Drain (Id) @ 25 ° C12mA, 3mA
Rds On (Max) @ Id, VGS500 Ohm @ 4.8V
VGS (th) (Max) @ Id820mV @ 1µA
Gate Charge (Qg) (Max) @ VGS-
Ingiza Capacitance (CISS) (Max) @ VDS2.5pF @ 5V
Power - Max500mW
uendeshaji Joto0°C ~ 70°C (TJ)
Upachikaji AinaThrough Hole
Furushi / Uchunguzi16-DIP (0.300", 7.62mm)
Supplier cha Vifaa Kifurushi16-PDIP
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Agizo

Bei ya Marejeleo:
50:$1.05930

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Upatikanaji:
Katika Hisa: 15109
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