ALD110808SCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16SOIC

ALD110808SCL

Pakua Hati ya Hati RoHSUfuataji wa RoHS
ALD110808SCL
Mtengenezaji
Advanced Linear Devices, Inc.
Sehemu ya Watengenezaji
ALD110808SCL
Jamii
Za kipekee Semiconductor Bidhaa
Jamii Ndogo
Transistors - FETs, MOSFETS - Arrays
Mfululizo
EPAD®
sehemu ya HaliActive
FET Aina4 N-Channel, Matched Pair
FET KipengeleStandard
Unyevu kwa Chanzo Voltage (Vdss)10.6V
Sasa - Kuendelea Drain (Id) @ 25 ° C12mA, 3mA
Rds On (Max) @ Id, VGS500 Ohm @ 4.8V
VGS (th) (Max) @ Id820mV @ 1µA
Gate Charge (Qg) (Max) @ VGS-
Ingiza Capacitance (CISS) (Max) @ VDS2.5pF @ 5V
Power - Max500mW
uendeshaji Joto0°C ~ 70°C (TJ)
Upachikaji AinaSurface Mount
Furushi / Uchunguzi16-SOIC (0.154", 3.90mm Width)
Supplier cha Vifaa Kifurushi16-SOIC
Nambari ya Sehemu ya Mtengenezaji Maelezo Kiasi Inapatikana Bei ya Kitengo
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Agizo

Bei ya Marejeleo:
50:$1.05930

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Upatikanaji:
Katika Hisa: 23374
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