ALD1110EPAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10V 8DIP

ALD1110EPAL

Pakua Hati ya Hati RoHSUfuataji wa RoHS
ALD1110EPAL
Mtengenezaji
Advanced Linear Devices, Inc.
Sehemu ya Watengenezaji
ALD1110EPAL
Jamii
Za kipekee Semiconductor Bidhaa
Jamii Ndogo
Transistors - FETs, MOSFETS - Arrays
Mfululizo
EPAD®
sehemu ya HaliActive
FET Aina2 N-Channel (Dual) Matched Pair
FET KipengeleStandard
Unyevu kwa Chanzo Voltage (Vdss)10V
Sasa - Kuendelea Drain (Id) @ 25 ° C-
Rds On (Max) @ Id, VGS500 Ohm @ 5V
VGS (th) (Max) @ Id1.01V @ 1µA
Gate Charge (Qg) (Max) @ VGS-
Ingiza Capacitance (CISS) (Max) @ VDS2.5pF @ 5V
Power - Max600mW
uendeshaji Joto0°C ~ 70°C (TJ)
Upachikaji AinaThrough Hole
Furushi / Uchunguzi8-DIP (0.300", 7.62mm)
Supplier cha Vifaa Kifurushi8-PDIP
Nambari ya Sehemu ya Mtengenezaji Maelezo Kiasi Inapatikana Bei ya Kitengo
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Agizo

Bei ya Marejeleo:
50:$1.37622

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Upatikanaji:
Katika Hisa: 11353
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