ALD114935PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8DIP

ALD114935PAL

Pakua Hati ya Hati RoHSUfuataji wa RoHS
ALD114935PAL
Mtengenezaji
Advanced Linear Devices, Inc.
Sehemu ya Watengenezaji
ALD114935PAL
Jamii
Za kipekee Semiconductor Bidhaa
Jamii Ndogo
Transistors - FETs, MOSFETS - Arrays
Mfululizo
EPAD®
sehemu ya HaliActive
FET Aina2 N-Channel (Dual) Matched Pair
FET KipengeleDepletion Mode
Unyevu kwa Chanzo Voltage (Vdss)10.6V
Sasa - Kuendelea Drain (Id) @ 25 ° C12mA, 3mA
Rds On (Max) @ Id, VGS540 Ohm @ 0V
VGS (th) (Max) @ Id3.45V @ 1µA
Gate Charge (Qg) (Max) @ VGS-
Ingiza Capacitance (CISS) (Max) @ VDS2.5pF @ 5V
Power - Max500mW
uendeshaji Joto0°C ~ 70°C (TJ)
Upachikaji AinaThrough Hole
Furushi / Uchunguzi8-DIP (0.300", 7.62mm)
Supplier cha Vifaa Kifurushi8-PDIP
Nambari ya Sehemu ya Mtengenezaji Maelezo Kiasi Inapatikana Bei ya Kitengo
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Agizo

Bei ya Marejeleo:
50:$0.99367

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Upatikanaji:
Katika Hisa: 17304
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