ALD212908APAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

ALD212908APAL

Pakua Hati ya Hati RoHSUfuataji wa RoHS
ALD212908APAL
Mtengenezaji
Advanced Linear Devices, Inc.
Sehemu ya Watengenezaji
ALD212908APAL
Jamii
Za kipekee Semiconductor Bidhaa
Jamii Ndogo
Transistors - FETs, MOSFETS - Arrays
Mfululizo
EPAD®, Zero Threshold™
sehemu ya HaliActive
FET Aina2 N-Channel (Dual) Matched Pair
FET KipengeleLogic Level Gate
Unyevu kwa Chanzo Voltage (Vdss)10.6V
Sasa - Kuendelea Drain (Id) @ 25 ° C80mA
Rds On (Max) @ Id, VGS-
VGS (th) (Max) @ Id20mV @ 10µA
Gate Charge (Qg) (Max) @ VGS-
Ingiza Capacitance (CISS) (Max) @ VDS-
Power - Max500mW
uendeshaji Joto0°C ~ 70°C (TJ)
Upachikaji AinaThrough Hole
Furushi / Uchunguzi8-DIP (0.300", 7.62mm)
Supplier cha Vifaa Kifurushi8-PDIP
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Agizo

Bei ya Marejeleo:
50:$1.20297

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Upatikanaji:
Katika Hisa: 13859
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